Features • DC Current Gain − hFE = 20− 70 @ IC = 4 Adc d446 • Collector− Emitter Saturation Voltage − VCE( sat) = 1. 2N3055/ D 2N3055( NPN) MJ2955( PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general− purpose switching d446 amplifier applications. Buy Direct Add to cart. Selectors Simulators and Models. B datasheet B datasheets manuals for B electornic semiconductor part. 1 Vdc ( Max) @ IC = 4 Adc. Source drain diode Symbol Parameter Test conditions Min.
Product is in volume datasheet production. HOME PRODUCTS & SERVICES DATASHEETS ELECTRICAL CONNECTORS d446 NEWARK / ELEMENT14 96M9382 Newark / element14 List your products or services on Engineering360. Request NEC D446C: Search> UPD446C online from Elcodis download D446C pdf datasheet, view Discrete Semiconductor Modules specifications. Unit ISD ISDM ( 1) 1. D446 datasheet. Pulse width limited by safe operating area. Differences between members of this family are the d446 under- voltage lockout thresholds and maximum duty cycle ranges.
Datasheets and technical informations for semiconductors and electronic components like D446, also for obsolete and discontinued parts including parametric search. 100V N- Channel MOSFET General Description Product Summary VDS I D ( at V GS = 10V) 11A R DS( ON) ( at V GS = 10V) < 140mΩ R DS( ON) ( at V GS = 4. 5V) < 152mΩ 100% UIS Tested 100% R g Tested Symbol VDS The AOD478/ AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS( ON). This device is ideal for. SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor V DS 650 V RDS( on) 0. 38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/ dt rated • High peak current capability • Improved transconductance PG- TO262 PG- TO220FP PG- TO220 Marking 11N65C3 11N65C3.
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